ASTM F996-1998(2003) 利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
作者:标准资料网 时间:2024-05-15 18:53:14 浏览:9590
来源:标准资料网
下载地址: 点击此处下载
【英文标准名称】:StandardTestMethodforSeparatinganIonizingRadiation-InducedMOSFETThresholdVoltageShiftIntoComponentsDuetoOxideTrappedHolesandInterfaceStatesUsingtheSubthresholdCurrent-VoltageCharacteristics
【原文标准名称】:利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
【标准号】:ASTMF996-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:场效应晶体管;半导体
【英文主题词】:c/vcharacteristics;current-voltagecharacteristics;interfacestates;ionizingradiation;MOSFET;oxide-trappedholes;thresholdvoltageshift;trappedholes
【摘要】:Theelectricalpropertiesofgateandfieldoxidesarealteredbyionizingradiation.Thetimedependentanddoserateeffectsoftheionizingradiationcanbedeterminedbycomparingpre-andpost-irradiationvoltageshifts,x0394;Votandx0394;Vit.ThistestmethodprovidesameansforevaluationoftheionizingradiationresponseofMOSFETsandisolationparasiticMOSFETs.Themeasuredvoltageshifts,x0394;Votandx0394;Vit,canprovideameasureoftheeffectivenessofprocessingvariationsontheionizingradiationresponse.Thistechniquecanbeusedtomonitorthetotal-doseresponseofaprocesstechnology.1.1Thistestmethodcoverstheuseofthesubthresholdchargeseparationtechniqueforanalysisofionizingradiationdegradationofagatedielectricinametal-oxide-semiconducter-field-effecttransistor(MOSFET)andanisolationdielecticinaparasiticMOSFET.Thesubthresholdtechniqueisusedtoseparatetheionizingradiation-inducedinversionvoltageshift,VINVintovoltageshiftsduetooxidetrappedcharge,Votandinterfacetraps,Vit.Thistechniqueusesthepre-andpost-irradiationdraintosourcecurrentversusgatevoltagecharacteristicsintheMOSFETsubthresholdregion.1.2ProceduresaregivenformeasuringtheMOSFETsubthresholdcurrent-voltagecharacteristicsandforthecalculationofresults.1.3TheapplicationofthistestmethodrequirestheMOSFETtohaveasubstrate(body)contact.1.4Bothpre-andpost-irradiationMOSFETsubthresholdsourceordraincurvesmustfollowanexponentialdependenceongatevoltageforaminimumoftwodecadesofcurrent.1.5ThevaluesgiveninSIunitsaretoberegardedasstandard.Nootherunitsofmeasurementareincludedinthistestmethod.1.6Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L42
【国际标准分类号】:
【页数】:7P.;A4
【正文语种】:
【原文标准名称】:利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
【标准号】:ASTMF996-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:场效应晶体管;半导体
【英文主题词】:c/vcharacteristics;current-voltagecharacteristics;interfacestates;ionizingradiation;MOSFET;oxide-trappedholes;thresholdvoltageshift;trappedholes
【摘要】:Theelectricalpropertiesofgateandfieldoxidesarealteredbyionizingradiation.Thetimedependentanddoserateeffectsoftheionizingradiationcanbedeterminedbycomparingpre-andpost-irradiationvoltageshifts,x0394;Votandx0394;Vit.ThistestmethodprovidesameansforevaluationoftheionizingradiationresponseofMOSFETsandisolationparasiticMOSFETs.Themeasuredvoltageshifts,x0394;Votandx0394;Vit,canprovideameasureoftheeffectivenessofprocessingvariationsontheionizingradiationresponse.Thistechniquecanbeusedtomonitorthetotal-doseresponseofaprocesstechnology.1.1Thistestmethodcoverstheuseofthesubthresholdchargeseparationtechniqueforanalysisofionizingradiationdegradationofagatedielectricinametal-oxide-semiconducter-field-effecttransistor(MOSFET)andanisolationdielecticinaparasiticMOSFET.Thesubthresholdtechniqueisusedtoseparatetheionizingradiation-inducedinversionvoltageshift,VINVintovoltageshiftsduetooxidetrappedcharge,Votandinterfacetraps,Vit.Thistechniqueusesthepre-andpost-irradiationdraintosourcecurrentversusgatevoltagecharacteristicsintheMOSFETsubthresholdregion.1.2ProceduresaregivenformeasuringtheMOSFETsubthresholdcurrent-voltagecharacteristicsandforthecalculationofresults.1.3TheapplicationofthistestmethodrequirestheMOSFETtohaveasubstrate(body)contact.1.4Bothpre-andpost-irradiationMOSFETsubthresholdsourceordraincurvesmustfollowanexponentialdependenceongatevoltageforaminimumoftwodecadesofcurrent.1.5ThevaluesgiveninSIunitsaretoberegardedasstandard.Nootherunitsofmeasurementareincludedinthistestmethod.1.6Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L42
【国际标准分类号】:
【页数】:7P.;A4
【正文语种】:
下载地址: 点击此处下载
